The TSV79x has been specially designed to minimize susceptibility to EMIRR and shows a low sensitivity. As

seen in Figure 45, EMI rejection ratio has been measured on both inputs and output, from 400 MHz to 2.4 GHz.

EMIRR performances might be improved by adding small capacitances (in the pF range) on the inputs, power

supply and output pins. These capacitances help to minimize the impedance of these nodes at high frequencies.

5.6

Maximum power dissipation

The usable output load current drive is limited by the maximum power dissipation allowed by the device package.

The absolute maximum junction temperature for the TSV79x is 150 °C. The junction temperature can be

estimated as follows:

TJ=PD×θJA+TA

(9)

by the output stage transistor. It is calculated as follows:

Do not exceed the 150 °C maximum junction temperature for the device. Exceeding the junction temperature limit

can cause degradation in the parametric performance or even destroy the device.

5.7

Capacitive load and stability

Stability analysis must be performed for large capacitive loads over 22 pF. Increasing the load capacitance to high

values produces gain peaking in the frequency response, with overshoot and ringing in the step response.

TSV791, TSV792

Maximum power dissipation

DS13480 - Rev 1

page 21/36