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FTK830F 数据表(PDF) 8 Page - First Silicon Co., Ltd |
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FTK830F 数据表(HTML) 8 Page - First Silicon Co., Ltd |
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8 / 8 page ![]() TYPICAL PERFORMANCE CUVES (Cont.) MOSFET 2007. 12. 18 8/8 FTK830P / F Revision No : 0 10 5 Source to Drain Voltage, VSD (V) SOURCE TO DRAIN DIODE VOLTAGE 0 1 4 1 2 GATE TO SOURCE VOLTAGE vs GATE CHARGE Gate Charge, QG (nC) 24 40 0 32 8 0 5 10 15 20 16 TJ=125 C TJ=25 C 100 5 2 2 Pulse Duration= 80μs Duty Cycle = 0 5% Max 2 3 ID=4.5A VDS=100V VDS=250V VDS=400V |
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