MMBFJ108 datasheet(2/8 Pages) ONSEMI

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Thermal Characteristics

Values are at TA = 25°C unless otherwise noted.

Notes:

3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

4. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Note:

5. Pulse test: pulse width

≤ 300 μs, duty cycle ≤ 2%.

Symbol

Parameter

Max.

Unit

J109(3)

MMBFJ108(4)

Total Device Dissipation

625

350

Derate Above 25

°C

5.0

2.8

mW/

°C

RθJC

Thermal Resistance, Junction-to-Case

125

°C/W

RθJA

Thermal Resistance, Junction-to-Ambient

200

357

°C/W

Symbol

Parameter

Conditions

Min.

Max.

Unit

Off Characteristics

V(BR)GSS Gate-Source Breakdown Voltage

IG = -10 μA, VDS = 0

-25

IGSS

Gate Reverse Current

VGS = -15 V, VDS = 0

-3.0

VGS = -15 V, VDS = 0, TA = 100°C

-200

VGS(off)

Gate-Source Cut-Off Voltage

VDS = 15 V, ID = 10 nA

MMBFJ108

-3.0

-10.0

J109

-2.0

-6.0

On Characteristics

IDSS

Zero-Gate Voltage Drain Current(5) VDS = 15 V, VGS = 0

MMBFJ108

J109

rDS(on)

Drain-Source On Resistance

VDS ≤ 0.1 V, VGS = 0

MMBFJ108

8.0

J109

Small Signal Characteristics

Cdg(on)

Csg(off)

Drain-Gate &Source-Gate On

Capacitance

VDS = 0, VGS = 0, f = 1.0 MHz

Cdg(off)

Drain-Gate Off Capacitance

VDS = 0, VGS = -10 V, f = 1.0 MHz

Csg(off)

Source-Gate Off Capacitance

VDS = 0, VGS = -10 V, f = 1.0 MHz

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