MMBFJ211 datasheet(2/9 Pages) ONSEMI

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Absolute Maximum Ratings(1), (2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-

duty-cycle operations.

Thermal Characteristics

Values are at TA = 25°C unless otherwise noted.

Note:

3. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Note:

4. Pulse test: pulse width

≤ 300 μs

Symbol

Parameter

Value

Unit

VDG

Drain-Gate Voltage

VGS

Gate-Source Voltage

-25

IGF

Forward Gate Current

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to 150

°C

Symbol

Parameter

Max.

Unit

J211(3)

MMBFJ211(3)

Total Device Dissipation

350

225

Derate Above 25

°C

2.8

1.8

mW/

°C

RθJC

Thermal Resistance, Junction-to-Case

125

°C/W

RθJA

Thermal Resistance, Junction-to-Ambient

357

556

°C/W

Symbol

Parameter

Conditions

Min.

Max.

Unit

Off Characteristics

V(BR)GSS

Gate-Source Breakdown Voltage

IG = 1.0 μA, VDS = 0

-25

IGSS

Gate Reverse Current

VGS = 15 V, VDS = 0

-100

VGS(off)

Gate-Source Cut-Off Voltage

VDS = 15 V, ID = 1.0 nA

-2.5

-4.5

On Characteristics

IDSS

Zero-Gate Voltage Drain Current(4) VDS = 15 V, VGS = 0

7.0

Small Signal Characteristics

gfs

Common Source Forward

Transconductance

VDS = 15 V, VGS = 0,

f = 1.0 kHz

7000

12000

μmhos

goss

Common Source Output

Conductance

VDS = 15 V, VGS = 0,

f = 1.0 kHz

200

μmhos

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