MMBZ27VCW datasheet(2/5 Pages) ONSEMI

2 / 5 page

MMBZ27VCW

www.onsemi.com

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Power Dissipation @ 1.0 ms (Note 1) @ TL ≤ 25°C

Ppk

Watts

Total Power Dissipation on FR−5 Board (Note 2) @ TA = 25°C

Derate above 25°C

°PD°

200

1.6

°mW°

mW/°C

Thermal Resistance Junction−to−Ambient

RqJA

618

°C/W

Junction and Storage Temperature Range

TJ, Tstg

− 55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Nonrepetitive current pulse per Figure 4 and derate above TA = 25°C per Figure 5.

2. FR−5 = 1.0 x 0.75 x 0.62 in.

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)

Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

Clamping Voltage @ IPP

VRWM

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ VRWM

VBR

Breakdown Voltage @ IT

Test Current

VBR

Maximum Temperature Coefficient of VBR

Forward Current

Forward Voltage @ IF

Uni−Directional TVS

IPP

VRWM

VC VBR

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)

(VF = 1.1 V Max @ IF = 200 mA)

Device

Marking

VRWM

IR @ VRWM

Breakdown Voltage

VC @ IPP (Note 4)

VBR

VBR (Note 3) (V)

@ IT

IPP

Volts

Min

Nom

Max

mV/5C

MMBZ27VCWT1G,

SZMMBZ27VCWT1G,

MMBZ27VCWT3G,

SZMMBZ27VCWT3G

25.65

28.35

1.0

3. VBR measured at pulse test current IT at an ambient temperature of 25°C.

4. Surge current waveform per Figure 4 and derate per Figure 5

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