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TLV9001UIDBVR 数据表(PDF) 15 Page - Texas Instruments |
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TLV9001UIDBVR 数据表(HTML) 15 Page - Texas Instruments |
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15 / 86 page  15 TLV9001, TLV9002, TLV9004 www.ti.com SBOS833O – OCTOBER 2017 – REVISED APRIL 2020 Product Folder Links: TLV9001 TLV9002 TLV9004 Submit Documentation Feedback Copyright © 2017–2020, Texas Instruments Incorporated (1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics. (2) This package option for TLV9001 is preview only. 7.4 Thermal Information: TLV9001 THERMAL METRIC(1) TLV9001 UNIT DBV (SOT-23) DCK (SC70) DPW (X2SON) DRL (SOT-553)(2) 5 PINS 5 PINS 5 PINS 5 PINS RθJA Junction-to-ambient thermal resistance 232.9 239.6 470.0 TBD °C/W RθJC(top) Junction-to-case (top) thermal resistance 153.8 148.5 211.9 TBD °C/W RθJB Junction-to-board thermal resistance 100.9 82.3 334.8 TBD °C/W ψJT Junction-to-top characterization parameter 77.2 54.5 29.8 TBD °C/W ψJB Junction-to-board characterization parameter 100.4 81.8 333.2 TBD °C/W (1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics. 7.5 Thermal Information: TLV9001S THERMAL METRIC(1) TLV9001S UNIT DBV (SOT-23) DCK (SC70) 6 PINS 6 PINS RθJA Junction-to-ambient thermal resistance 232.9 215.6 °C/W RθJC(top) Junction-to-case (top) thermal resistance 153.8 146.4 °C/W RθJB Junction-to-board thermal resistance 100.9 72.0 °C/W ψJT Junction-to-top characterization parameter 77.2 55.0 °C/W ψJB Junction-to-board characterization parameter 100.4 71.7 °C/W (1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics. 7.6 Thermal Information: TLV9002 THERMAL METRIC(1) TLV9002 UNIT D (SOIC) DGK (VSSOP) DGS (VSSOP) DSG (WSON) PW (TSSOP) DDF (SOT-23) 8 PINS 8 PINS 10 PINS 8 PINS 8 PINS 8 PINS RθJA Junction-to-ambient thermal resistance 207.9 201.2 169.5 103.2 200.7 183.7 °C/W RθJC(top) Junction-to-case (top) thermal resistance 92.8 85.7 84.1 120.1 95.4 112.5 °C/W RθJB Junction-to-board thermal resistance 129.7 122.9 113 68.8 128.6 98.2 °C/W ψJT Junction-to-top characterization parameter 26 21.2 15.8 14.7 27.2 18.8 °C/W ψJB Junction-to-board characterization parameter 127.9 121.4 111.6 68.5 127.2 97.6 °C/W (1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics. 7.7 Thermal Information: TLV9002S THERMAL METRIC(1) TLV9002S UNIT DGS (VSSOP) RUG (X2QFN) 10 PINS 10 PINS RθJA Junction-to-ambient thermal resistance 169.5 194.2 °C/W RθJC(top) Junction-to-case (top) thermal resistance 84.1 90.3 °C/W RθJB Junction-to-board thermal resistance 113 122.2 °C/W ψJT Junction-to-top characterization parameter 15.8 3.5 °C/W ψJB Junction-to-board characterization parameter 111.6 118.8 °C/W |
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