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PDMB50A6 数据表(PDF) 2 Page - Nihon Inter Electronics Corporation

部件名 PDMB50A6
功能描述  IGBT MODULE Dual 50A 600V
PDF  3 Pages
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制造商  NIEC [Nihon Inter Electronics Corporation]
网页  http://www.niec.co.jp
标志 NIEC - Nihon Inter Electronics Corporation

PDMB50A6 数据表(HTML) 2 Page - Nihon Inter Electronics Corporation

  PDMB50A6 Datasheet HTML 1Page - Nihon Inter Electronics Corporation PDMB50A6 Datasheet HTML 2Page - Nihon Inter Electronics Corporation PDMB50A6 Datasheet HTML 3Page - Nihon Inter Electronics Corporation  
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PDMB50A6
024
68
10
0
20
40
60
80
100
Collector to Emitter Voltage VCE (V)
Fig.1- Output Characteristics (Typical)
TC=25℃
10V
9V
12V
15V
VGE=20V
8V
7V
04
8
12
16
20
0
2
4
6
8
10
12
14
16
Gate to Emitter Voltage VGE (V)
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=25℃
50A
IC=20A
100A
04
8
12
16
20
0
2
4
6
8
10
12
14
16
Gate to Emitter Voltage VGE (V)
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=125℃
50A
IC=20A
100A
0
2
4
6
8
10
12
14
16
0
50
100
150
200
0
50
100
150
200
250
300
350
400
Total Gate Charge Qg (nC)
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
VCE=300V
200V
100V
RL=5Ω
TC=25℃
0.2
0.5
1
2
5
10
20
50
100
200
20
50
100
200
500
1000
2000
5000
10000
20000
Collector to Emitter Voltage VCE (V)
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
Cies
Coes
Cres
VGE=0V
f=1MHZ
TC=25℃
0
20
40
60
80
100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Collector Current IC (A)
Fig.6- Collector Current vs. Switching Time (Typical)
toff
VCC=300V
RG=15Ω
VGE=±15V
TC=25℃
ton
tr
tf



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