LM04P021 datasheet(2/6 Pages) LEIDITECH

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Electrical Characteristics

Tj= 25ºC unless otherwise specified

Parameter

Symbol

Test Conditions

Value

Unit

Min.

Typ.

Max.

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = -250µA

-40

Zero Gate Voltage Drain Current

IDSS

VDS = -40V, VGS = 0V, TJ = 25ºC

-1

Gate-Source Leakage

IGSS

VGS = ±20V

100

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = -250µA

-1.1

-1.7

-2.5

Drain-Source On-Resistance (note2)

RDS(on)

VGS = -4.5V, ID = -3A

mΩ

VGS = -10V, ID = -4A

mΩ

Dynamic

Input Capacitance

Ciss

VGS = 0V,

VDS = -20V,

f = 1.0MHz

2050

Output Capacitance

Coss

260

Reverse Transfer Capacitance

Crss

150

Total Gate Charge

VDD = -20V, ID = -8A,

VGS = -10V

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-on Delay Time

td(on)

VDS = -20V, RL = 1.6Ω

VGS = -10V,ID = -1A

Turn-on Rise Time

Turn-off Delay Time

td(off)

Turn-off Fall Time

Body Diode Characteristics

Source-Drain Current(Body Diode)

ISD

TJ = 25ºC

-8.0

Body Diode Voltage

VSD

TJ = 25ºC, ISD = -8A, VGS = 0V

-1.2

Notes

1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2. The data tested by pulsed , pulse width≦300us , duty cycle≦2%

3. The power dissipation is limited by 175℃ junction temperature

4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

LM04P021

Rev :

www.leiditech.com

01.06.2018

2/6

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