2SA921 datasheet(1/2 Pages) PANASONIC

部件名	2SA921

功能描述	Silicon NPN epitaxial planer type

PDF	2 Pages

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制造商	PANASONIC [Panasonic Semiconductor]

网页	http://www.panasonic.com/industrial/

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1

Transistor

2SC1980

Silicon NPN epitaxial planer type

For high breakdown voltage low-noise amplification

Complementary to 2SA921

s Features

q

High collector to emitter voltage VCEO.

q

Low noise voltage NV.

s Absolute Maximum Ratings (Ta=25˚C)

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Emitter

2:Collector

3:Base

JEDEC:TO–92

EIAJ:SC–43A

5.0

±0.2

4.0

±0.2

0.45

+0.2

–0.1

0.45

+0.2

–0.1

1.27

2.54

±0.15

2

13

Symbol

VCBO

VCEO

VEBO

ICP

IC

PC

Tj

Tstg

Ratings

120

7

50

20

250

150

–55 ~ +150

Unit

V

mA

mW

˚C

*h

FE Rank classification

Rank

R

S

T

hFE

180 ~ 360

260 ~ 520

360 ~ 700

s Electrical Characteristics (Ta=25˚C)

Parameter

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Transition frequency

Noise voltage

Symbol

ICBO

ICEO

VCBO

VCEO

VEBO

hFE

*

VCE(sat)

fT

NV

Conditions

VCB = 50V, IE = 0

VCE = 50V, IB = 0

IC = 10µA, IE = 0

IC = 1mA, IB = 0

IE = 10µA, IC = 0

VCE = 5V, IC = 2mA

IC = 20mA, IB = 2mA

VCB = 5V, IE = –2mA, f = 200MHz

VCE = 40V, IC = 1mA, GV = 80dB

Rg = 100kΩ, Function = FLAT

min

120

7

180

typ

200

max

0.1

1

700

0.6

150

Unit

µA

V

MHz

mV

类似零件编号 - 2SA921

制造商	部件名	数据表	功能描述
Panasonic Semiconductor	2SA921	37Kb / 2P	Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
Panasonic Semiconductor	2SA921	71Kb / 3P	For high breakdown voltage low-noise amplification Complementary

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