FTK4964Z datasheet(1/5 Pages) FS

部件名	FTK4964Z

功能描述	40V N-Channel MOSFETs

PDF	5 Pages

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制造商	FS [First Silicon Co., Ltd]

网页	http://www.firstsilicon.co.kr/

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40V N-Channel MOSFETs

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

40

V

VGS

Gate-Sou

rce Voltage

± 20

V

ID

Drain Current – Continuous (TC=25℃)

54

A

Drain Current – Continuous (TC=100℃)

34.1

A

IDM

Drain Current – Pulsed1

216

A

EAS

Single Pulse Avalanche Energy2

76

mJ

IAS

Single Pulse Avalanche Current2

39

A

PD

Power Dissipation (TC=25℃)

52

W

Power Dissipation – Derate above 25℃

0.42

W/℃

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

Symbol

Parameter

Typ.

Max.

Unit

RθJA

Thermal Resistance Junction to ambient

---

62

℃/W

RθJC

Thermal Resistance Junction to Case

---

2.4

℃/W

BVDSS

RDSON

ID

40V

6.5m

Ω

54A

These N-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

 40V, 54A, RDS(ON) =6.5m

Ω@VGS = 10V

 Improved dv/dt capability

 Fast switching

 Green Device Available

General Description

Features

Applications

 MB / VGA / Vcore

 POL Applications

 SMPS 2nd SR

Thermal Characteristics

PPAK3x3 Pin Configuration

D

S

D

G

S

G

S

D D

D

1

5

4

8

Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)

2018. 12. 17

1/5

Revision No : 0

SEMICONDUCTOR

TECHNICAL DATA

FTK4964Z

类似零件编号 - FTK4964Z

制造商	部件名	数据表	功能描述
First Silicon Co., Ltd	FTK4964D	1Mb / 5P	40V N-Channel MOSFET s

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