2SC5935Q datasheet(1/3 Pages) PANASONIC

部件名	2SC5935Q

功能描述	Silicon NPN triple diffusion planar type

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制造商	PANASONIC [Panasonic Semiconductor]

网页	http://www.panasonic.com/industrial/

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Power Transistors

1

Publication date: July 2004

SJD00318AED

2SC5935

Silicon NPN triple diffusion planar type

For power amplification

For TV vertical deflection output

■ Features

• Satisfactory linearity of forward current transfer ratio h

FE

• Dielectric breakdown voltage of the package: 5 kV

• Full-pack package which can be installed to the heat sink with one

screw.

■ Absolute Maximum Ratings T

C

= 25°C

■ Electrical Characteristics T

C

= 25°C ± 3°C

Unit: mm

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

1: Base

2: Collector

3: Emitter

TO-220D-A1 Package

Rank

Q

P

hFE1

60 to 140

100 to 240

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

VCBO

200

V

Collector-emitter voltage (Base open)

VCEO

180

V

Emitter-base voltage (Collector open)

VEBO

6V

Collector current

IC

2A

Peak collector current

ICP

3A

Collector power

PC

25

W

dissipation

Ta = 25°C

2.0

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

VCBO

IC = 50 µA, IE = 0

200

V

Collector-emitter voltage (Base open)

VCEO

IC = 5 mA, IB = 0

180

V

Emitter-base voltage (Collector open)

VEBO

IE

= 500 µA, I

C

= 06

V

Base-emitter voltage

VBE

VCE = 10 V, IC = 400 mA

1

V

Collector-base cutoff current (Emitter open)

ICBO

VCB = 200 V, IE = 050

µA

Emitter-base cutoff current (Collector open)

IEBO

VEB

= 4 V, I

C

= 050

µA

Forward current transfer ratio

hFE1 *

VCE = 10 V, IC = 150 mA

60

240



hFE2

VCE = 10 V, IC = 400 mA

50

Collector-emitter saturation voltage

VCE(sat)

IC

= 500 mA, I

B

= 50 mA

1

V

Transition frequency

fT

VCE = 10 V, IC = 0.5 A, f = 1 MHz

20

MHz

1.4±0.2

1.6±0.2

0.8±0.1

0.55±0.15

2.54±0.30

5.08±0.50

12

3

2.6±0.1

2.9±0.2

4.6±0.2

φ 3.2±0.1

9.9±0.3

类似零件编号 - 2SC5935Q

制造商	部件名	数据表	功能描述
Toshiba Semiconductor	2SC5930	142Kb / 5P	Silicon NPN Triple Diffused Type (PCT Process) High-Speed and High-Voltage Switching Applications
Toshiba Semiconductor	2SC5930	1Mb / 73P	Bipolar Small-Signal Transistors
Panasonic Semiconductor	2SC5931	67Kb / 3P	Silicon NPN triple diffusion mesa type
Sanyo Semicon Device	2SC5932	52Kb / 3P	2SC5932
Sanyo Semicon Device	2SC5933	52Kb / 3P	2SC5933

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类似说明 - 2SC5935Q

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