RFD10P03LSM datasheet(4/12 Pages) HARRIS

4 / 12 page

NOTE: Refer to Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING

CAPABILITY

FIGURE 7. SATURATION CHARACTERISTICS

FIGURE 8. TRANSFER CHARACTERISTICS

FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

FIGURE 10. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

-50

-10

-1

0.01

0.1

tAV, TIME IN AVALANCHE (ms)

IF R

≠ 0

tAV = (L/R) ln [(IAS*R)/(1.3 RATED BVDSS - VDD) + 1]

STARTING TJ = 150

STARTING TJ = 25

tAV = (L) (IAS)/(1.3 RATED BVDSS - VDD)

If R = 0

-1.0

-2.0

-3.0

-5.0

-10

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = -4V

VGS = -10V

-4.0

VGS =-3.5V

VGS = -3V

VGS = -5V

-20

-15

-25

-5

PULSE DURATION = 250

µs,

TC = 25

-3.0

-4.5

-6.0

-1.5

-10

175oC

VGS, GATE TO SOURCE VOLTAGE (V)

-55oC

25oC

-20

-25

-15

-5

VDD = -15V

PULSE TEST

PULSE DURATION = 250

µs

DUTY CYCLE = 0.5% MAX

100

200

300

400

-2.0

-4.0

-6.0

-8.0

-10.0

VGS, GATE TO SOURCE VOLTAGE (V)

ID = -20A

ID = -10A

ID = -5A

ID = -2.5A

TC = 25

2.0

0.5

0.0

-40

TJ, JUNCTION TEMPERATURE (

oC)

120

1.0

1.5

160

200

-80

VGS = -5V, ID = -10.0A

1.2

1.0

0.9

0.8

-40

TJ, JUNCTION TEMPERATURE (

oC)

120

1.1

-80

160

200

ID =- 250uA

RFD10P03L, RFD10P03LSM, RFP10P03L

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