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MBRFH3045CT 数据表(PDF) 1 Page - First Silicon Co., Ltd |
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MBRFH3045CT 数据表(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 3 page ![]() SEMICONDUCTOR TECHNICAL DATA 2016. 02. 20 1/3 Revision No : 0 MBRH3045CT , MBRFH3045CT Schottky Barrier Rectifier (Low VF) Reverse Voltage 45 Volts Forward Current 30 Amperes Features ● Low forward voltage drop, low power losses ● High efficiency operation ● Plastic package has underwriters Laboratory Flammability Classification 94V-0 Mechanical Data ● Case: Epoxy, molded ● Weight: 1.9grams (approximately) ● Lead Temperature for Soldering Purposes: 260°C Max. for 10 sec ● 50 units per plastic tube Maximum Ratings & Electrical Characteristics (TA=25°C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Maximum repetitive peak reverse voltage VRRM 45 V Working peak reverse voltage VRWM 45 V Maximum DC blocking voltage VDC 45 V Maximum average forward rectified current at Tc=105°C total device per diode IF(AV) 30 15 A Peak forward surge current 8.3ms single harf sine-wave superimposed on rated load per diode IFSM 200 A Peak repetitive reverse current per leg at tp=2.0us ,1KHz IRRM 1.0 A Voltage rate of change(rated VR) DV/dt 10000 V/us Operating junction temperature range TJ - 55 to+150 °C Storage temperature range TSTG - 55 to+150 °C Isolation voltage (TO-220F only) from terminal to heatsink t = 1sec VAC 1500 V Maximum instantaneous forward voltage per leg IF=15A IF=15A TC=25°C TC=125°C VF 0.55 0.46 V Maximum reverse current per leg at working peak Reverse voltage TJ=25°C TJ=100°C IR 200 15 uA mA Thermal Characteristics TA=25°C unless otherwise noted Symbol Parameter TYP. (TO-220) TYP. (TO-220F) Unit RθJC Thermal Resistance, Junction to Case per Leg 2.0 4.0 °C /W RθJA Thermal Resistance, Junction to Ambient per Leg 62.5 62.5 °C /W Note: Pulse test:300us pulse width, duty cycle=2% |
类似零件编号 - MBRFH3045CT |
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类似说明 - MBRFH3045CT |
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