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B0520WS 数据表(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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B0520WS 数据表(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 3 page ![]() SOD-323 Plastic-Encapsulate Diodes B0520WS Low Forward Voltage Drop Guard Ring Construction for Transient Protection High Conductance Also Available in Lead Free Version Maximum Ratings @Ta=25 ℃ Parameter Symbo Unit Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage VRRM VRWM VR V RMS reverse voltage reverse voltage (DC) VR(RMS) 14 Average rectified output current Io 0.5 Non-repetitive Peak Forward Surge Current @t=8.3ms IFSM 5.5 A Power dissipation PD 200 mW Thermal resistance junction to ambient RθJA 500 ℃/W Junction temperature Tj 1 25 ℃ Storage temperature TSTG - 55~+150 ℃ Voltage rate of change dv/dt 1000 V/μ s Electrical Characteristics @Ta=25 ℃ Capacitance between terminals CT pF VR=1,f=1MHz SOD-323 MARKING:B2 The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device. FEATURES V 20 Value Symbol Test conditions Reverse breakdown voltage V(BR) IR=250uA V Reverse current IR VR=10V IF Forward voltage VF IF 0.39 V uA =0.5A =0.1A A Min Max Unit 20 VR=20V 75 250 0.33 170 Typ Schottky Barrier Diode Rev : www.leiditech.com 01.06.2015 1/3 |
类似零件编号 - B0520WS |
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类似说明 - B0520WS |
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