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IRF830F 数据表(PDF) 2 Page - First Silicon Co., Ltd

部件名 IRF830F
功能描述  4.4A, 500V, 1.5廓 N-CHANNEL POWER MOSFET
PDF  7 Pages
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制造商  FS [First Silicon Co., Ltd]
网页  http://www.firstsilicon.co.kr/
标志 FS - First Silicon Co., Ltd

IRF830F 数据表(HTML) 2 Page - First Silicon Co., Ltd

  IRF830F Datasheet HTML 1Page - First Silicon Co., Ltd IRF830F Datasheet HTML 2Page - First Silicon Co., Ltd IRF830F Datasheet HTML 3Page - First Silicon Co., Ltd IRF830F Datasheet HTML 4Page - First Silicon Co., Ltd IRF830F Datasheet HTML 5Page - First Silicon Co., Ltd IRF830F Datasheet HTML 6Page - First Silicon Co., Ltd IRF830F Datasheet HTML 7Page - First Silicon Co., Ltd  
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ABSOLUTE MAXIMUM RATINGS
(Ta=25˚C, unless otherwise specified)
PARAMET
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
(TJ = 25˚C ~ 125˚C)
500
V
VDS
Drain to Gate Voltage (RGS = 20kΩ) (TJ =25˚C ~ 125˚C)
VDGR
500
V
Gate to Source Voltage
IGS
±20
V
Continuous
4.5
A
Drain Current
Ta = 100°C
ID
2.9
IDM
18
A
EAS
W
Maximum Power Dissipation
Derating above 25℃
W/˚C
Single Pulse Avalanche Energy Rating
(VDD=50V, starting TJ =25℃,L=24mH,Rg =25Ω, peak IAS =4.5A)
280
PD
Note: 1. Signified recommend operating range that indicates conditions for which the device is intended to be
functional, but does not guarantee specific performance limits.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta
= 25˚C , unless Otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
UNIT
500
V
Drain-Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V
VDS = VGS, ID = 250µA
4.0
µ
A
Gate to Threshold Voltage
VGS(TH)
VDS > ID(ON) X RDS(ON)MAX, VGS = 10V
A
On-State Drain Current (Note 1)
ID(ON)
Zero Gate Voltage Drain Current
IDSS
VDS = Rated BVDSS, VGS = 0V
Gate to Source Leakage Current
IGSS
VGS = ±20V
2.5
25
V
Drain to Source On Resistance
(Note 2)
RDS(ON)
ID = 2.7A, VGS = 10V
250
Ω
Forward Transconductance
(Note 2)
4.2
pF
Turn-On Delay Time
tDLY(ON)
8.2
pF
Rise Time
tR
VDD = 250V, ID ≈ 3.1A,
RGS = 12Ω, RL = 79Ω
(Note 2)
16
2015. 06. 26
2/7
Revision No : 0
TSTG
-55 ~ +150
˚C
MAX
Storage Temperature
Turn-Off Delay Time
tDLY(OFF)
VGS = 10V, ID = 3.1A,
VDS = 0.8 X Rated BVDSS
IG(REF) = 1.5mA (Note 3)
ns
Fall Time
tF
16
Gate to Source Charge
QGS
5
nC
Gate to Drain “Miller” Charge
QGD
VDS = 25V, VGS = 0V,f = 1.0MHz
22
nC
Total Gate Charge
Input Capacitance
CISS
610
nC
QG(TOT)
gFS
VDS ≥ 10V, ID = 2.7A
1.15
S
42
38
TJ
+150
˚C
Junction Temperature
Pulsed
ID
mJ
A
Output Capacitance
Reverse - Transfer Capacitance
COSS
CRSS
VDS = 0.8 x Rated BVDSS,
VGS = 0V, TJ = 125˚C
2.0
4.5
68
160
±100
1.5
µ
A
nA
ns
ns
pF
ns
Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. MOSFET Switching Times are Essentially Independent of Operating Temperature.
3. Gate Charge is Essentially Independent of Operating Temperature.
TC = 25°C
(TO-220F/220)
31/100
0.25/0.5
IRF830/F



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