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HS1AF 数据表(PDF) 1 Page - First Silicon Co., Ltd |
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HS1AF 数据表(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 2 page ![]() Features Mechanical Data Maximum Ratings and Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. ● Glass passivated junction ● Low forward voltage drop ● High current capability ● Low reverse leakage ● High surge current capability ● High reliablity ● Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ● Case: SMA-FL molded plastic body ● Terminals: Plated axial leads, solderable per MIL-STD-750, method 2026 ● Polarity: Color band denotes cathode end ● Mounting Position: Any ● Weight: 0.0027 grams (approximate) PARAMETER SYMBOL HS1AF HS1BF HS1DF HS1GF HS1JF HS1KF HS1MF UNITS Maximum repetitive peak reverse voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage V DC 50 100 200 400 600 800 1000 V Average Rectified Output Current 0.375″(9.5mm) lead length I o 1.0 A Peak forward surge current, 8.3 mS single half sine-wave superimposed on rated load I FSM 30 A Maximum instantaneous forward voltage at I o V F 1.3 V Maximum DC reverse current @ TJ = 25℃ at rated DC blocking voltage @ TJ = 100℃ I R 5.0 50 μA Maximum reverse recovery time (Note 1) t rr 50 75 nS Typical junction capacitance (Note 2) C j 10 pF Typical thermal resistance RθJA Notes: 1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A. 2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC. ℃/W Operating junction temperature range T J -55 to +150 ℃ Storage temperature range T STG -55 to +150 ℃ 1.0 1.7 SEMICONDUCTOR TECHNICAL DATA HS1AF THRU HS1MF 1A SURFACE MOUNT ULTRA FAST RECOVERY RECTIFIER Reverse Voltage 50 to 1000 Volts Forward Current 1.0 Amperes 2018. 04. 12 1/2 Revision No : 0 80 |
类似零件编号 - HS1AF |
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类似说明 - HS1AF |
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