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2N60LL-TN3-R 数据表(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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2N60LL-TN3-R 数据表(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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2 / 5 page ![]() www.doingter.cn — 2 — Electrical Characteristics:(T C=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 600 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=600V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±30V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 --- 4 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=1A --- --- 5 Ω Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 270 350 pF Coss Output Capacitance --- 40 50 Crss Reverse Transfer Capacitance --- 5 7 Switching Characteristics td(on) Turn-On Delay Time 3,4 VDD=300V, ID=2A, RGEN=25Ω --- 10 30 ns tr Rise Time 3,4 --- 25 60 ns td(off) Turn-Off Delay Time 3,4 --- 20 50 ns tf Fall Time 3,4 --- 25 60 ns Qg Total Gate Charge 3,4 VGS=10V, VDS=480V, ID=2A --- 90 11 nC Qgs Gate-Source Charge 3,4 --- 1.6 --- nC Qgd Gate-Drain “Miller” Charge 3,4 --- 4.3 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,ID=2A --- --- 1.5 V 2N60LL-TN3-R |
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