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2N80L-TN3-R 数据表(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

部件名 2N80L-TN3-R
功能描述  N-Channel MOSFET uses advanced trench technology
PDF  5 Pages
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制造商  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
网页  http://www.doingter.cn/
标志 DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

2N80L-TN3-R 数据表(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

  2N80L-TN3-R Datasheet HTML 1Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 2N80L-TN3-R Datasheet HTML 2Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 2N80L-TN3-R Datasheet HTML 3Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 2N80L-TN3-R Datasheet HTML 4Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 2N80L-TN3-R Datasheet HTML 5Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.  
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Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
800
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=800V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±30V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
3
---
5
V
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=1A
---
---
6.3
Ω
Dynamic Characteristics
Ciss
Input Capacitance
VDS=25V, VGS=0V, f=1MHz
---
425
550
pF
Coss
Output Capacitance
---
45
60
Crss
Reverse Transfer Capacitance
---
5
7
Switching Characteristics
td(on)
Turn-On Delay Time
3,4
VDS=300V, ID=2A,
RGEN=25Ω
---
12
35
ns
tr
Rise Time
3,4
---
30
70
ns
td(off)
Turn-Off Delay Time
3,4
---
25
60
ns
tf
Fall Time
3,4
---
28
65
ns
Qg
Total Gate Charge
3,4
VGS=10V, VDS=640V,
ID=2A
---
12
15
nC
Qgs
Gate-Source
Charge
3,4
---
2.6
---
nC
Qgd
Gate-Drain “Miller” Charge
3,4
---
6.0
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
VGS=0V,ID=2A
---
---
1.4
V
2N80L-TN3-R



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