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NSVBAS16W1T1G 数据表(PDF) 2 Page - ON Semiconductor |
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NSVBAS16W1T1G 数据表(HTML) 2 Page - ON Semiconductor |
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2 / 6 page ![]() BAS16W1 www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Condition Min Max Unit Reverse Voltage Leakage Current IR VR = 30 V − 0.1 mAdc VR = 80 V − 0.5 VR = 100 V − 1.0 Forward Voltage VF IF = 1 mA − 0.72 Vdc IF = 10 mA − 0.85 IF = 50 mA − 1.0 IF = 100 mA − 1.2 Reverse Breakdown Voltage VR IR = 100 mA 100 − Vdc Diode Capacitance CD VR = 0, f = 1.0 MHz − 2.0 pF Reverse Recovery Time (Figure 1) trr (Note 2) IF = 10 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR − 3.0 ns 2. trr Test Circuit |
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