2011. 11. 16

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Revision No : 0

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PARAMETER

TEST CONDITIONS

SYMBOL MBRF10200CT

UNIT

Maximum repetitive peak reverse voltage

200

V

Working peak reverse voltage

200

V

Maximum DC blocking voltage

200

V

Maximum average forward rectified current at

Tc=105°C total device per diode

10

5

A

Peak forward surge current 8.3ms single half sine-wave

superimposed on rated load per diode

125

A

Peak repetitive reverse current per leg at tp=2.0us ，1KHz

0.5

A

Voltage rate of change（rated VR）

DV/dt

10000

V/us

Operating junction temperature range

―55 to+150

°C

Storage temperature range

―55 to+150

°C

Isolation voltage (TO220F only) from terminal to

heatsink t = 1 sec

VAC

1500

V

Maximum instantaneous forward voltage per leg

IF=5A

IF=5A

VF

0.92

0.82

V

Maximum reverse current per leg at working peak

Reverse voltage

500

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mA

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Thermal Resistance，Junction to Case per Leg

4.0

°C /W

Thermal Resistance，Junction to Ambient per Leg

62.5

°C /W

Note

1. Screw mounting with 4-40 screw，where washer diameteris≤4.9mm(0.19〃)

2. Pulse test:300us pulse width,1% duty cycle

MBR10200CT, MBRF10200CT, MBRB10200CT