| 数据搜索系统,热门电子元器件搜索 |
|
12N10G-S08-R 数据表(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
|
|
|||||||||||||||||||||||||||||
12N10G-S08-R 数据表(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
|
2 / 6 page ![]() www.doingter.cn — 2 — Electrical Characteristics:(T C=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 100 --- --- V IDSS Drain-Source Leakage Current VDS=80V , VGS=0V --- --- 25 uA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0V --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 1.7 3 V △VGS(th) VGS(th) Temperature Coefficient --- --- --- mV/℃ RDS(ON) Static Drain-Source On Resistance VGS=10V,ID=3A --- 112 135 mΩ VGS=4.5V,ID=2A --- 120 145 GFS Forward Transconductance VDS=5V, ID=3A --- 11 --- S Dynamic Characteristics 4 Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 610 980 pF Coss Output Capacitance --- 40 --- Crss Reverse Transfer Capacitance --- 25 --- Switching Characteristics td(on) Turn-On Delay Time 2,3 VDS=50V, ID=1A, RGEN=3.3Ω, VGS=10V --- 7 --- ns tr Rise Time 2,3 --- 5 --- ns td(off) Turn-Off Delay Time 2,3 --- 16 --- ns tf Fall Time 2,3 --- 6 --- ns Qg Total Gate Charge 2,3 VGS=10V, VDS=80V, ID=3A --- 12 20 nC Qgs Gate-Source Charge 2,3 --- 2.2 --- nC Qgd Gate-Drain “Miller” Charge 2,3 --- 2.5 --- nC Drain-Source Diode Characteristics 12N10G-S08-R |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |