19N10L-TN3-R datasheet(4/4 Pages) DOINGTER

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19N10L-TN3-R 数据表(PDF) 4 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

部件名	19N10L-TN3-R

功能描述	N-Channel MOSFET uses advanced trench technology

PDF	4 Pages

Scroll/Zoom	100%

制造商	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

网页	http://www.doingter.cn/

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19N10L-TN3-R

VSD, Source-Drain Voltage (V)

Fig5. Typical Source-Drain Diode Forward Voltage

VDS, Drain -Source Voltage (V)

Fig6. Maximum Safe Operating Area

VDS, Drain-Source Voltage (V)

Fig7. Typical Capacitance Vs. Drain-Source Voltage

Qg, Total Gate Charge (nC)

Fig8. Typical Gate Charge Vs. Gate-Source Voltage

Pulse Width (s)

Fig9. Normalized Maximum Transient Thermal Impedance

００８６－０７５５－８２７８－９０５６

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