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BAS716 数据表(PDF) 2 Page - NXP Semiconductors |
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BAS716 数据表(HTML) 2 Page - NXP Semiconductors |
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2 / 8 page ![]() 2003 Nov 07 2 Philips Semiconductors Product specification Low-leakage diode BAS716 FEATURES • Plastic SMD package • Low leakage current: typ. 0.2 nA • Switching time: typ. 0.6 µs • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA. APPLICATION • Low leakage current applications in surface mounted circuits. DESCRIPTION Epitaxial medium-speed switching diode with a low leakage current in an ultra small SOD523 (SC-79) SMD plastic package. PINNING PIN DESCRIPTION 1 cathode 2 anode handbook, halfpage12 Top view MAM408 Fig.1 Simplified outline (SOD523; SC-79) and symbol. Marking code: S1. The marking bar indicates the cathode. ORDERING INFORMATION LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Device mounted on a FR4 printed-circuit board. TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION BAS716 − plastic surface mounted package; 2 leads SOD523 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 85 V VR continuous reverse voltage − 75 V IF continuous forward current see Fig.2; note 1 − 200 mA IFRM repetitive peak forward current − 500 mA IFSM non-repetitive peak forward current square wave; Tj =25 °C prior to surge; see Fig.4 tp =1 µs − 4A tp =1ms − 1A tp =1s − 0.5 A Ptot total power dissipation Tamb =25 °C; note 1 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C |
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