0809LD30P datasheet(1/1 Pages) ETC1

部件名	0809LD30P

功能描述	30 WATT, 28V, 1 GHz LDMOS FET

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制造商	ETC1 [List of Unclassifed Manufacturers]

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R.0.2P.991602-BEHRE

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE

WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

0809LD30P

30 WATT, 28V, 1 GHz

LDMOS FET

PRELIM I N A RY I S S U E

GENERAL DESCRIPTION

The 0809LD30P is a common source N-Channel enhancement mode lateral

MOSFET capable of providing 30 Watts of RF power from HF to 1 GHz. The

device is nitride passivated and utilizes gold metallization to ensure high

reliability and supreme ruggedness.

CASE OUTLINE

55QU

Common Source

ABSOLUTE MAXIMUM RATINGS

Power Dissipation

Device Dissipation @25

°C (P

d)

110 W

Thermal Resistance (

θ

JC)1.5°C/W

Voltage and Current

Drain-Source (VDSS)

65V

Gate-Source (VGS)

±20V

Temperatures

Storage Temperature

-65 to +200

°C

Operating Junction Temperature

+200

°C

ELECTRICAL CHARACTERISTICS @ 25

°°°°C

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

ΒV

dss

Drain-Source Breakdown

Vgs = 0V, Id = 2ma

65

70

V

Idss

Drain-Source Leakage Current

Vds = 28V, Vgs= 0V

1

A

Igss

Gate-Source Leakage Current

Vgs = 20V, Vds = 0V

1

A

Vgs(th)

Gate Threshold Voltage

Vds = 10V, Id = 10ma

2

4

5

V

Vds(on)

Drain-Source On Voltage

Vgs = 10V, Id = 2A

1.0

V

gFS

Forward Transconductance

Vds = 10V, Id = 3A

1.4

S

Ciss

Input Capacitance

Vds = 28V, Vgs = 0V, F = 1 MHz

60

pF

Crss

Reverse Transfer Capacitance

Vds = 28V, Vgs = 0V, F = 1 MHz

2.5

pF

Coss

Output Capacitance

Vds = 28V, Vgs = 0V, F = 1 MHz

32

pF

FUNCTIONAL CHARACTERISTICS @ 25

°°°°C

GPS

Common Source Power Gain

Vds = 28V, Idq = 0.15A,

F = 900MHz, Pout = 30W

14

dB

η

d

Drain Efficiency

Vds = 28V, Idq = 0.15A,

F = 900MHz, Pout = 30W

50

%

IMD3

Intermodulation Distortion,

3

rd Order

Vds = 28V, Idq = 0.3A,

Pout =30WPEP, F1 = 900 MHz,

F2 = 900.1 MHz

-30

dBc

Ψ

Load Mismatch

Vds = 28V, Idq = 0.15A,

F = 900MHz, Pout = 30W

10:1

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