2SC5877S

Transistors

2/3

!

!

!

!

Electrical characteristics (Ta=25

°C)

Collector-emitter breakdown voltage

Collector-base breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

DC current gain

Transition frequency

Corrector output capacitance

Turn-on time

Storage time

Fall time

Parameter

Symbol

Min.

Typ.

Max.

Unit

Condition

Cob

Ton

Tstg

Tf

=1mA

=100µA

=100µA

=40V

=4V

=100mA

=10mA

=2V

=50mA

=10V

= −100mA

f

=10MHz

=10V

=0mA

f

=1MHz

∗1

∗1

∗2

60

60

6

−

−

−

120

−

−

−

−

−

−

−

−

−

−

150

−

300

5

70

130

80

−

−

−

1.0

1.0

300

390

−

−

−

−

−

V

V

V

µA

µA

mV

−

MHz

pF

ns

ns

ns

=500mA

=50mA

= −50mA

∗1 Non repetitive pulse

∗2 See Switching charactaristics measurement circuits

!

!

!

!

Q

120

−270

R

180

−390

!

!

!

!

Electrical characteristic curves

0.1

100

10

1

0.01

0.1

1

10

Fig.1 Safe Operating Area

Single

non repetitive

Pulsed

DC

100ms

10ms

1ms

500

µs

0.01

10

1

0.1

10

100

1000

Fig.2 Switching Time

Ta

=25°C

=25V

=10 / 1

Tstg

Tf

Ton

0.001

1

0.1

0.01

1

10

100

1000

Fig.3 DC Current Gain vs.

Ι)

Ta

=125°C

Ta

=25°C

Ta

= −40°C

=2V

0.001

1

0.1

0.01

1

10

100

1000

Fig.4 DC Current Gain vs.

ΙΙ)

Ta

=25°C

=5V

=3V

=2V

0.001

10

1

0.1

0.01

0.01

0.1

1

10

=10 / 1

Fig.5 Collector-Emitter Saturation

Ι)

Ta

=125°C

Ta

=25°C

Ta

= −40°C

0.001

1

0.1

0.01

0.01

0.1

1

10

Ta

=25°C

=20 / 1

=10 / 1

Fig.6 Collector-Emitter Saturation

ΙΙ)