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FS110 数据表(PDF) 1 Page - First Silicon Co., Ltd |
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FS110 数据表(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 2 page ![]() 2012 10 17 1/2 Revision No : 0 SEMICONDUCTOR TECHNICAL DATA FS12 ~ FS110 ■ Features ■ Outline Dimensions and Mark ● Io 1.0A ● VRRM 20V~100V ● Low VF ,Low power loss ● High surge forward current capability ■ Applications ● Rectifier ■ Limiting Values(Absolute Maximum Rating) Item Symbol Unit Conditions FS1 2 3 4 5 6 8 10 Repetitive Peak Reverse Voltage VRRM V 20 30 40 50 60 80 100 Average Rectified Output Current IO A 60Hz One-way half-wave, R-load,Ta=75℃ 1.0 Surge(Non-repetitive) Forward Current IFSM A 60HZ sine wave, 1 cycle, Tj=25℃ 30 Storage Temperature Tstg ℃ -55 ~ +150 Junction Temperature Tj ℃ ■ Electrical Characteristics(Ta=25℃ Unless otherwise specified) Item Symbol Unit Test Condition 2 3 4 5 6 8 10 Peak Forward Voltage VFM V IFM=1.0A 0.5 0.7 0.85 Peak Reverse Current IRRM mA VRM=VRRM , Ta=25℃ 0.5 Thermal Resistance Rθ J-L ℃/W Between junction and lead 20 Dimensions in inches and (millimeters) SOD-123F .047(1.20) .039(1.00) .010(0.25) .004(0.10) .043(1.10) .035(0.90) .075(1.90) .063(1.60) .002(0.05) .001(0.02) -55 ~ +150 -55 ~ +125 FS1 Schottky Rectifier |
类似零件编号 - FS110 |
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类似说明 - FS110 |
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