UTT18P06G-TN3-R datasheet(1/8 Pages) VBSEMI

部件名	UTT18P06G-TN3-R

功能描述	P-Channel 60 V (D-S) MOSFET

PDF	8 Pages

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制造商	VBSEMI [VBsemi Electronics Co.,Ltd]

网页	www.VBsemi.com

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P-Channel 60 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

100 % UIS Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

High Side Switch for Full Bridge Converter

•

DC/DC Converter for LCD Display

Notes:

a. Duty cycle

1 %.

b. When mounted on 1" square PCB (FR-4 material).

c. See SOA curve for voltage derating.

d. Based up on TC = 25 °C.

PRODUCT SUMMARY

VDS (V)

RDS(on) ()

ID (A)

d

Qg (Typ)

- 60

0.053 at VGS = - 10 V

- 25

26

0.062 at VGS = - 4.5 V

- 20

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise note)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 60

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

- 25

A

TC = 125 °C

- 20

Pulsed Drain Current

IDM

- 100

Avalanche Current, Single Pulse

L = 0.1 mH

IAS

- 22

Repetitive Avalanche Energy, Single Pulsea

EAS

24.2

mJ

Power Dissipation

TC = 25 °C

PD

38.5c

W

TA = 25 °C

2.3b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

TO-252

S

GD

Top View

Drain Connected to Tab

S

G

D

P-Channel MOSFET

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb

t

 10 s

RthJA

17

21

°C/W

Steady State

45

55

Maximum Junction-to-Case

RthJC

2.7

3.25

E-mail：China@VBsemi TEL:86-755-83251052

www.VBsemi.tw

UTT18P06G-TN3-R

1

类似零件编号 - UTT18P06G-TN3-R

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