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UT4420-S08-R 数据表(PDF) 3 Page - VBsemi Electronics Co.,Ltd

部件名 UT4420-S08-R
功能描述  N-Channel 20V (D-S) MOSFET
PDF  9 Pages
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制造商  VBSEMI [VBsemi Electronics Co.,Ltd]
网页  www.VBsemi.com
标志 VBSEMI - VBsemi Electronics Co.,Ltd

UT4420-S08-R 数据表(HTML) 3 Page - VBsemi Electronics Co.,Ltd

  UT4420-S08-R Datasheet HTML 1Page - VBsemi Electronics Co.,Ltd UT4420-S08-R Datasheet HTML 2Page - VBsemi Electronics Co.,Ltd UT4420-S08-R Datasheet HTML 3Page - VBsemi Electronics Co.,Ltd UT4420-S08-R Datasheet HTML 4Page - VBsemi Electronics Co.,Ltd UT4420-S08-R Datasheet HTML 5Page - VBsemi Electronics Co.,Ltd UT4420-S08-R Datasheet HTML 6Page - VBsemi Electronics Co.,Ltd UT4420-S08-R Datasheet HTML 7Page - VBsemi Electronics Co.,Ltd UT4420-S08-R Datasheet HTML 8Page - VBsemi Electronics Co.,Ltd UT4420-S08-R Datasheet HTML 9Page - VBsemi Electronics Co.,Ltd  
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
10
20
30
40
50
0
246
8
10
VGS =10thru 6 V
VGS =4 V
VDS - Drain-to-Source Voltage (V)
0.005
0.007
0.009
0.011
0.013
0.015
0
10203040
50
VGS =4.5 V
VGS =10 V
ID - Drain Current (A)
0
2
4
6
8
10
04
8
12
16
VDS = 15 V
ID = 11 A
VDS =10 V
Qg - Total Gate Charge (nC)
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
TC = 25 °C
TC = 125 °C
TC =- 55 °C
VGS - Gate-to-Source Voltage (V)
Crss
0
300
600
900
1200
0
6
12
18
24
30
Ciss
Coss
VDS - Drain-to-Source Voltage (V)
0.6
0.9
1.2
1.5
1.8
- 50
- 25
0
25
50
75
100
125
150
VGS =4.5 V
VGS =10 V
ID = 11 A
TJ -Junction Temperature (°C)
E-mail：China@VBsemi TEL:86-755-83251052
3
www.VBsemi.tw
UT4420-S08-R



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