UT4812L-S08-R datasheet(1/9 Pages) VBSEMI

部件名	UT4812L-S08-R

功能描述	Dual N-Channel 30-V (D-S) MOSFET

PDF	9 Pages

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制造商	VBSEMI [VBsemi Electronics Co.,Ltd]

网页	www.VBsemi.com

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Dual N-Channel 30-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

100 % UIS Tested

•

100 % Rg Tested

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Set Top Box

•

Low Current DC/DC

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

Qg (Typ.)

30

0.0

22 at V

GS = 10 V

15 nC

0.0

26 at V

GS = 4.5 V

6.0

D1

G1

D1

D2

G2

D2

SO-8

5

6

7

8

Top View

2

3

4

1

S1

S2

N-Channel MOSFET

G1

D1

S1

N-Channel MOSFET

G2

D2

S2

Notes:

a. Package limited, TC = 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 110 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

a

A

TC = 70 °C

5.6

TA = 25 °C

6.2b, c

TA = 70 °C

5.2b, c

Pulsed Drain Current

IDM

30

Continuous Source-Drain Diode Current

TC = 25 °C

IS

2.25

TA = 25 °C

1.48b, c

Single Pulse Avalanche Current

L = 0.1 mH

IAS

5

Single Pulse Avalanche Energy

EAS

1.25

mJ

Maximum Power Dissipation

TC = 25 °C

PD

2.7

W

TC = 70 °C

1.77

TA = 25 °C

1.78b, c

TA = 70 °C

1.14b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, c, d

t

≤ 10 s

RthJA

58

70

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

38

45

6.8

E-mail：China@VBsemi TEL:86-755-83251052

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UT4812L-S08-R

1

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