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BT136S-600E 数据表(PDF) 3 Page - First Silicon Co., Ltd |
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BT136S-600E 数据表(HTML) 3 Page - First Silicon Co., Ltd |
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3 / 4 page ![]() BT136S-600E 2016. 08. 17 3/4 Revision No : 0 Fig.1. Maximum on-state dissipation, P tot, versus rms on-state current, I T(RMS), where α = conduction angle. Fig.2. Maximum permissible non-repetitive peak on-state current I TSM, versus pulse width tp, for sinusoidal currents, t p ≤20ms. Fig.3. Maximum permissible non-repetitive peak on-state current I TSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. Fig.4. Maximum permissible rms current I T(RMS) , versus mounting base temperature T mb. Fig.5. Maximum permissible repetitive rms on-state current I T(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; T mb ≤ 107˚C. Fig.6. Normalised gate trigger voltage V GT(Tj)/ VGT (25˚C), versus junction temperature T j. 01234 5 0 1 2 3 4 5 6 7 8 = 180 120 90 60 30 IT(RMS) / A C / ) x a m ( b m T W / t o t P 125 122 119 116 113 110 107 104 101 -50 0 50 100 150 0 1 2 3 4 5 Tmb / C IT(RMS) / A 107 C 10us 100us 1ms 10ms 100ms 10 100 1000 T / s ITSM / A T ITSM time I Tj ini ial = 25 C max T dI /dt limit T T2- G+ quadrant 0 01 0.1 1 10 0 2 4 6 8 10 12 surge duration / s IT(RMS) / A 1 10 100 1000 0 5 10 15 20 25 30 Number of cycles at 50Hz ITSM / A T ITSM time I Tj initial = 25 C max T -50 0 50 100 150 0.4 0.6 0.8 1 1.2 1.4 1.6 Tj / C VGT(Tj) VGT(25 C) |
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