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BT136S-600E 数据表(PDF) 3 Page - First Silicon Co., Ltd

部件名 BT136S-600E
功能描述  MAIN FEATURES
PDF  4 Pages
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制造商  FS [First Silicon Co., Ltd]
网页  http://www.firstsilicon.co.kr/
标志 FS - First Silicon Co., Ltd

BT136S-600E 数据表(HTML) 3 Page - First Silicon Co., Ltd

  BT136S-600E Datasheet HTML 1Page - First Silicon Co., Ltd BT136S-600E Datasheet HTML 2Page - First Silicon Co., Ltd BT136S-600E Datasheet HTML 3Page - First Silicon Co., Ltd BT136S-600E Datasheet HTML 4Page - First Silicon Co., Ltd  
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BT136S-600E
2016. 08. 17
3/4
Revision No : 0
Fig.1. Maximum on-state dissipation, P
tot, versus rms
on-state current, I
T(RMS), where α = conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM, versus pulse width tp, for
sinusoidal currents, t
p ≤20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS) ,
versus mounting base temperature T
mb.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
107˚C.
Fig.6. Normalised gate trigger voltage
V
GT(Tj)/ VGT
(25˚C), versus junction temperature T
j.
01234
5
0
1
2
3
4
5
6
7
8
= 180
120
90
60
30
IT(RMS) / A
C
/
)
x
a
m
(
b
m
T
W
/
t
o
t
P
125
122
119
116
113
110
107
104
101
-50
0
50
100
150
0
1
2
3
4
5
Tmb / C
IT(RMS) / A
107 C
10us
100us
1ms
10ms
100ms
10
100
1000
T / s
ITSM / A
T
ITSM
time
I
Tj ini ial = 25 C max
T
dI /dt limit
T
T2- G+ quadrant
0 01
0.1
1
10
0
2
4
6
8
10
12
surge duration / s
IT(RMS) / A
1
10
100
1000
0
5
10
15
20
25
30
Number of cycles at 50Hz
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
Tj / C
VGT(Tj)
VGT(25 C)



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