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FTK2N60P 数据表(PDF) 2 Page - First Silicon Co., Ltd

部件名 FTK2N60P
功能描述  2 Amps, 600 Volts N-CHANNEL MOSFET
PDF  7 Pages
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制造商  FS [First Silicon Co., Ltd]
网页  http://www.firstsilicon.co.kr/
标志 FS - First Silicon Co., Ltd

FTK2N60P 数据表(HTML) 2 Page - First Silicon Co., Ltd

  FTK2N60P Datasheet HTML 1Page - First Silicon Co., Ltd FTK2N60P Datasheet HTML 2Page - First Silicon Co., Ltd FTK2N60P Datasheet HTML 3Page - First Silicon Co., Ltd FTK2N60P Datasheet HTML 4Page - First Silicon Co., Ltd FTK2N60P Datasheet HTML 5Page - First Silicon Co., Ltd FTK2N60P Datasheet HTML 6Page - First Silicon Co., Ltd FTK2N60P Datasheet HTML 7Page - First Silicon Co., Ltd  
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ABSOLUTE MAXIMUM RATINGS
(TC = 25 , unless otherwise specified)
PARAMET
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
600
V
VDSS
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
2.0
A
TC = 25°C
2.0
A
Drain Current Continuous
TC = 100°C
ID
1.2
A
Drain Current Pulsed (Note 2)
IDP
8.0
A
Repetitive(Note 2)
EAR
5.4
mJ
Avalanche Energy
Single Pulse(Note 3)
EAS
131
mJ
Peak Diode Recovery
dv/dt
4.5
V/ns
TC = 25°C
45/45/62.5/31
W
Total Power Dissipation
Derate above 25°C
PD
0.36/0.36/0.5/0.25
W / ˚C
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤ 2.0A, di/dt ≤ 300A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
PACKAGE
SYMBOL
RATINGS
UNIT
TO-251
112
TO-252
112
TO-220
54
Thermal Resistance Junction-Ambient
TO-220F
θJA
54
TO-251
2.8
TO-252
2.8
TO-220
2
Thermal Resistance Junction-Case
TO-220F
θJc
4
˚C / W
ELECTRICAL CHARACTERISTICS
(TJ = 25˚C , unless Otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
UNIT
OFF CHARACTERISTICS
600
V
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
VDS = 600V, V GS = 0V
10
µ
A
Zero Gate Voltage Drain Current
IDSS
VDS = 480V, T C = 125°C
10
µ
A
Forward
VGS = 30V, VDS = 0V
100
nA
Gate-Body Leakage Current
Reverse
IGSS
VGS = -30V, VDS = 0V
-100
nA
Breakdown Voltage Temperature
Coefficient
BVDSS/
TJ
ID = 250 µA
0.7
V / ˚C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250µA
2.0
4.0
V
Static Drain-Source On-Resistance
RDS(ON)
VGS = 10V, ID =1A
3.8
5
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
350
pF
Output Capacitance
COSS
40
pF
Reverse Transfer Capacitance
CRSS
VDS =25V, VGS =0V, f =1MHz
5
pF
2011. 08. 25
2/7
FTK2N60P / F / D / I
Revision No : A
Junction Temperature
TJ
+150
˚C
Storage Temperature
TSTG
-55 ~ +150
˚C
MAX
(TO-251/252/TO-220/TO-220F)



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