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FTK4903P 数据表(PDF) 2 Page - First Silicon Co., Ltd

部件名 FTK4903P
功能描述  40V P-Channel MOSFETs
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  FS [First Silicon Co., Ltd]
网页  http://www.firstsilicon.co.kr/
标志 FS - First Silicon Co., Ltd

FTK4903P 数据表(HTML) 2 Page - First Silicon Co., Ltd

  FTK4903P Datasheet HTML 1Page - First Silicon Co., Ltd FTK4903P Datasheet HTML 2Page - First Silicon Co., Ltd FTK4903P Datasheet HTML 3Page - First Silicon Co., Ltd FTK4903P Datasheet HTML 4Page - First Silicon Co., Ltd FTK4903P Datasheet HTML 5Page - First Silicon Co., Ltd  
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40V P-Channel MOSFETs
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=
-250uA
-40
---
---
V
IDSS
Drain-Source Leakage Current
VDS=
-40V , VGS=0V , TJ=25℃
---
---
-1
uA
VDS=
-32V , VGS=0V , TJ=125℃
---
---
-10
uA
IGSS
Gate-Source Leakage Current
VGS=± 20V , VDS=0V
---
---
±
100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=
-10V , ID=-10A
---
11.5
15
mΩ
VGS=
-4.5V , ID=-8A
---
16
22
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =
-250uA
-1.0
-1.6
-2.5
V
gfs
Forward Transconductance
VDS=
-10V , ID=-10A
---
13
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge2 , 3
VDS=
-32V , VGS=-4.5V , ID=-10A
---
22.2
40
nC
Qgs
Gate-Source Charge2 , 3
---
8.2
16
Qgd
Gate-Drain Charge2 , 3
---
8.8
16
Td(on)
Turn-On Delay Time2 , 3
VDD=
-20V , VGS=-10V , RG=6Ω
ID=
-1A
---
23
40
ns
Tr
Rise Time2 , 3
---
10
20
Td(off)
Turn-Off Delay Time2 , 3
---
135
250
Tf
Fall Time2 , 3
---
46
90
Ciss
Input Capacitance
VDS=
-25V , VGS=0V , F=1MHz
---
2757
4000
pF
Coss
Output Capacitance
---
240
360
Crss
Reverse Transfer Capacitance
---
137
200
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
-55
A
ISM
Pulsed Source Current
---
---
-110
A
VSD
Diode Forward Voltage
VGS=0V , IS=
-1A , TJ=25℃
---
---
-1
V
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
3.
Essentially independent of operating temperature.
Drain-Source Diode Characteristics and Maximum Ratings
Electrical Characteristics (TJ=25℃, unless otherwise noted)
2019. 09. 17
2/5
Revision No : 0
FTK4903P



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