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FTK4960P 数据表(PDF) 2 Page - First Silicon Co., Ltd

部件名 FTK4960P
功能描述  40V N-Channel MOSFETs
PDF  5 Pages
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制造商  FS [First Silicon Co., Ltd]
网页  http://www.firstsilicon.co.kr/
标志 FS - First Silicon Co., Ltd

FTK4960P 数据表(HTML) 2 Page - First Silicon Co., Ltd

  FTK4960P Datasheet HTML 1Page - First Silicon Co., Ltd FTK4960P Datasheet HTML 2Page - First Silicon Co., Ltd FTK4960P Datasheet HTML 3Page - First Silicon Co., Ltd FTK4960P Datasheet HTML 4Page - First Silicon Co., Ltd FTK4960P Datasheet HTML 5Page - First Silicon Co., Ltd  
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Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
40
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.03
---
V/℃
IDSS
Drain-Source Leakage Current
VDS=40V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=32V , VGS=0V , TJ=125℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=± 20V , VDS=0V
---
---
±
100
nA
RDS(ON)
Static Drain-Source On-Resistance3
VGS=10V , ID=25A
---
3.1
3.8
mΩ
VGS=4.5V , ID=12A
---
4.0
5.0
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.2
1.6
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-5
---
mV/℃
gfs
Forward Transconductance
VDS=10V , ID=2A
---
16
---
S
Qg
Total Gate Charge3,4
VDS=20V , VGS=4.5V , ID=10A
---
44.4
80
nC
Qgs
Gate-Source Charge3,4
---
9.6
18
Qgd
Gate-Drain Charge3,4
---
16
30
Td(on)
Turn-On Delay Time3,4
VDD=20V , VGS=10V , RG=6Ω
ID=1A
---
28
50
ns
Tr
Rise Time3,4
---
3.2
6.5
Td(off)
Turn-Off Delay Time3,4
---
89
160
Tf
Fall Time3,4
---
14
28
Ciss
Input Capacitance
VDS=25V , VGS=0V , F=1MHz
---
4940
7800
pF
Coss
Output Capacitance
---
425
800
Crss
Reverse Transfer Capacitance
---
170
330
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
1.4
2.8
Ω
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
150
A
ISM
Pulsed Source Current3
---
---
300
A
VSD
Diode Forward Voltage3
VGS=0V , IS=1A , TJ=25℃
---
---
1
V
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=25V,VGS=10V,L=0.1mH,IAS=79A., Starting TJ=25℃
3.
The data tested by pulsed , pulse width ≦300us , duty cycle ≦2%.
4.
Essentially independent of operating temperature.
Drain-Source Diode Characteristics
Dynamic Characteristics
On Characteristics
40V N-Channel MOSFETs
Electrical Characteristics (TJ=25℃, unless otherwise noted)
2020. 06. 05
2/5
Revision No : 0
FTK4960P



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