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UT70P03L-TN3-R 数据表(PDF) 3 Page - VBsemi Electronics Co.,Ltd

部件名 UT70P03L-TN3-R
功能描述  P-Channel 30 V (D-S) MOSFET
PDF  8 Pages
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制造商  VBSEMI [VBsemi Electronics Co.,Ltd]
网页  www.VBsemi.com
标志 VBSEMI - VBsemi Electronics Co.,Ltd

UT70P03L-TN3-R 数据表(HTML) 3 Page - VBsemi Electronics Co.,Ltd

  UT70P03L-TN3-R Datasheet HTML 1Page - VBsemi Electronics Co.,Ltd UT70P03L-TN3-R Datasheet HTML 2Page - VBsemi Electronics Co.,Ltd UT70P03L-TN3-R Datasheet HTML 3Page - VBsemi Electronics Co.,Ltd UT70P03L-TN3-R Datasheet HTML 4Page - VBsemi Electronics Co.,Ltd UT70P03L-TN3-R Datasheet HTML 5Page - VBsemi Electronics Co.,Ltd UT70P03L-TN3-R Datasheet HTML 6Page - VBsemi Electronics Co.,Ltd UT70P03L-TN3-R Datasheet HTML 7Page - VBsemi Electronics Co.,Ltd UT70P03L-TN3-R Datasheet HTML 8Page - VBsemi Electronics Co.,Ltd  
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
0
50
100
150
200
250
02468
10
VDS - Drain-to-Source Voltage (V)
VGS = 10 V thru 6 V
5 V
3 V
4 V
ID - Drain Current (A)
125 °C
0
30
60
90
120
150
0
20406080
100
25 °C
TC = - 55 °C
0
2000
4000
6000
8000
10 000
12 000
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
Ciss
Coss
Crss
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
40
80
120
160
200
0123456
VGS - Gate-to-Source Voltage (V)
25 °C
125 °C
TC = - 55 °C
0
0.006
0.012
0.018
0.024
0.030
0.036
0
20406080
100
120
ID - Drain Current (A)
VGS = 10 V
VGS = 4.5 V
0
4
8
12
16
20
0
50
100
150
200
250
300
Qg - Total Gate Charge (nC)
VDS = 15 V
ID = 75 A
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
UT70P03L-TN3-R
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