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UD4606L-S08-R 数据表(PDF) 4 Page - VBsemi Electronics Co.,Ltd

部件名 UD4606L-S08-R
功能描述  N- and P-Channel 30 V (D-S) MOSFET
PDF  14 Pages
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制造商  VBSEMI [VBsemi Electronics Co.,Ltd]
网页  www.VBsemi.com
标志 VBSEMI - VBsemi Electronics Co.,Ltd

UD4606L-S08-R 数据表(HTML) 4 Page - VBsemi Electronics Co.,Ltd

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N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
10
20
30
40
0
0.5
1
1.5
2
V
DS - Drain-to-Source Voltage (V)
V
GS = 10 V thru 4 V
V
GS = 3 V
0.010
0.015
0.020
0.025
0.030
0
10
20
30
40
I
D - Drain Current (A)
V
GS = 8 V
V
GS = 4.5 V
V
GS = 10 V
0
2
4
6
8
10
0
3
6
9
12
15
Q
g - Total Gate Charge (nC)
V
DS = 10 V
V
DS = 20 V
V
DS = 32 V
I
D = 6.8 A
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
0
0.6
1.2
1.8
2.4
3
V
GS - Gate-to-Source Voltage (V)
T
C = 25 °C
T
C = 125 °C
T
C = - 55 °C
0
200
400
600
800
1000
0
10
20
30
40
V
DS - Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50
- 25
0
25
50
75
100
125
150
T
J - Junction Temperature (°C)
I
D = 6.8 A
V
GS = 10 V; 4.5 V
UD4606L-S08-R
4
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw



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