UD9926L-S08-R datasheet(4/7 Pages) VBSEMI

部件名	UD9926L-S08-R

功能描述	Dual N-Channel 20-V (D-S) MOSFET

PDF	7 Pages

Scroll/Zoom	100%

制造商	VBSEMI [VBsemi Electronics Co.,Ltd]

网页	www.VBsemi.com

标志

4 / 7 page

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

VSD - Source-to-Drain Voltage (V)

TJ = 150 °C

TJ = 25 °C

TJ - Temperature (°C)

- 0.6

- 0.4

- 0.2

0.0

0.2

0.4

- 50

- 25

100

125

150

ID = 250 µA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

VGS - Gate-to-Source Voltage (V)

0.00

0.02

0.04

0.06

0.08

0.10

1234

ID = 7.1 A

0.01

0.10

1.00

10.00

Time (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (s)

0.1

0.01

10-4

10-3

10-2

10-1

110

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

1. Duty Cycle, D =

2. Per Unit Base = R thJA = 62.5 °C/W

3. T JM - TA = PDMZthJA(t)

Notes:

4. Surface Mounted

PDM

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UD9926L-S08-R

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