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2SC5032 数据表(PDF) 2 Page - Panasonic Semiconductor

部件名 2SC5032
功能描述  Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
PDF  3 Pages
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制造商  PANASONIC [Panasonic Semiconductor]
网页  http://www.panasonic.com/industrial/
标志 PANASONIC - Panasonic Semiconductor

2SC5032 数据表(HTML) 2 Page - Panasonic Semiconductor

  2SC5032 Datasheet HTML 1Page - Panasonic Semiconductor 2SC5032 Datasheet HTML 2Page - Panasonic Semiconductor 2SC5032 Datasheet HTML 3Page - Panasonic Semiconductor  
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2
Power Transistors
2SC5032
PC —Ta
IC —VCE
VCE(sat) —IC
VBE(sat) —IC
hFE —IC
fT —IC
Cob —VCB
ton, tstg, tf — IC
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
40
30
10
20
(1)
(3)
(2)
(1) T
C=Ta
(2) With a 100
× 100 × 2mm
Al heat sink
(3) Without heat sink
(P
C=2W)
Ambient temperature Ta (˚C)
012
10
8
26
4
0
6
5
4
3
2
1
T
C=25˚C
400mA
300mA
200mA
100mA
50mA
I
B=500mA
Collector to emitter voltage V
CE
(V)
0.1
1
10
100
0.3
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C/IB=5
–25˚C
25˚C
T
C=100˚C
Collector current I
C
(A)
0.1
1
10
100
0.3
3
30
0.1
100
10
1
0.3
3
30
I
C/IB=5
T
C=–25˚C
25˚C
125˚C
Collector current I
C
(A)
0.01
0.1
1
10
0.03
0.3
3
1
1000
100
10
3
30
300
V
CE=5V
–25˚C
T
C=125˚C
25˚C
Collector current I
C
(A)
0.01
0.1
1
10
0.03
0.3
3
0.1
100
10
1
0.3
3
30
V
CE=10V
f=1MHz
T
C=25˚C
Collector current I
C
(A)
1
3
10
30
100
1
1000
100
10
3
30
300
I
E=0
f=1MHz
T
C=25˚C
Collector to base voltage V
CB
(V)
04
13
2
0.01
0.03
0.1
0.3
1
3
10
30
100
t
stg
t
f
t
on
Pulsed t
w=1ms
Duty cycle=1%
I
C/IB=10
(2I
B1=–IB2)
V
CC=200V
T
C=25˚C
Collector current I
C
(A)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C=25˚C
I
CP
I
C
DC
10ms
t=1ms
Collector to emitter voltage V
CE
(V)



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