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FS1K 数据表(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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FS1K 数据表(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 3 page ![]() FS1A~FS1M Features ● Low profile package ● Ideal for automated placement ● Glass passivated chip junctions ● Fast switching for high efficiency ● High forward surge capability ● High temperature soldering: 260℃/10 seconds at terminals ● Component in accordance to RoHS 2002/95/1 and WEEE 2002/96/EC Mechanical Date Major Ratings and Characteristics ● Case: JEDEC DO-214AC molded plastic body over glass passivated chip ● Terminals: Solder plated, solderable per JESD22-B102 ● Polarity: Laser band denotes cathode end IF(AV) 1.0 A VRRM 50 V to 1000 V IFSM 30 A trr 150nS, 250nS, 500nS VF 1.3 V Tj max. 150 °C Maximum Ratings & Thermal Characteristics (TA = 25 °C unless otherwise noted) Note 1: Mounted on P.C.B. with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas. Electrical Characteristics (TA = 25 °C unless otherwise noted) Note 2: Pulse test:300μs pulse width,1% duty cycle. Typical junction capacitance 4.0 V ,1MHz CJ 11 8 pF Reverse recovery time IF = 0.5 A , IR = 1.0 A , Irr = 0.25 A trr 500 nS 150 250 Reverse current VR=VDC Tj=25℃ IR 5 μA Tj=125℃ 50 UNIT Instantaneous forward voltage IF=1.0 A (2) VF V 1.3 Items Test conditions Symbol FS1A~FS1G FS1J FS1K~FS1M Maximum average forward rectified current IF(AV) j Items Symbol FS1A FS1B FS1D FS1G FS1J FS1K FS1M UNIT 560 700 V Maximum DC blocking voltage VDC Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 Maximum RMS voltage VRMS 35 70 140 280 V Operating junction and storage temperature range TJ ,TSTG –55 to +150 ℃ Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A Thermal resistance from junction to lead (1) RθJL 35 ℃/ W 1.0 600 800 1000 V 50 100 200 400 A 420 Fast Recovery rectifier Rev : www.leiditech.com 01.06.2017 1/3 |
类似零件编号 - FS1K |
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类似说明 - FS1K |
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