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THS4281DBVT 数据表(PDF) 2 Page - Texas Instruments

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部件名 THS4281DBVT
功能描述  VERY LOW-POWER, HIGH-SPEED, RAIL-TO-RAIL INPUT AND OUTPUT VOLTAGE-FEEDBACK OPERATIONAL AMPLIFIER
PDF  31 Pages
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制造商  TI [Texas Instruments]
网页  http://www.ti.com
标志 TI - Texas Instruments

THS4281DBVT 数据表(HTML) 2 Page - Texas Instruments

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ABSOLUTE MAXIMUM RATINGS
(1)
RECOMMENDED OPERATING CONDITIONS
DISSIPATION RATINGS TABLE PER PACKAGE
THS4281
SLOS432 – APRIL 2004
These devices have limited built-in ESD protection. The leads should be shorted together or the device
placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
over operating free-air temperature range (unless otherwise noted)
UNIT
Supply voltage, VS- to VS+
16.5 V
Input voltage, VI
±V
S± 0.5 V
Differential input voltage, VID
±2 V
Output current, IO
±100 mA
Continuous power dissipation
See Dissipation Rating Table
Maximum junction temperature, any condition, (2) TJ
150
°C
Maximum junction temperature, continuous operation, long term reliability(2) TJ
125
°C
Storage temperature range, Tstg
-65
°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
300
°C
HBM
3500 V
ESD ratings
CDM
1500 V
MM
100 V
(1)
The absolute maximum ratings under any condition is limited by the constraints of the silicon process. Stresses above these ratings may
cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.
(2)
The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may
result in reduced reliability and/or lifetime of the device. recommended operating conditions.
MIN
MAX
UNIT
Dual supply
±1.35
±8.25
Supply voltage, (VS+ and VS -)
V
Single supply
2.7
16.5
θ
JA
(1)
POWER RATING(2)
θ
JC
PACKAGE
(
°C/W)
(
°C/W)
TA < 25°C
TA = 85°C
DBV (5)
55
255.4
391 mW
156 mW
D (8)
38.3
97.5
1.02 W
410 mW
DGK (8)
71.5
180.8
553 mW
221 mW
(1)
This data was taken using the JEDEC standard High-K test PCB.
(2)
Power rating is determined with a junction temperature of 125
°C. This is the point where distortion starts to substantially increase.
Thermal management of the final PCB should strive to keep the junction temperature at or below 125
°C for best performance and long
term reliability.
2



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