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2SC5513 数据表(PDF) 1 Page - Panasonic Semiconductor

部件名 2SC5513
功能描述  Silicon NPN triple diffusion mesa type(For horizontal deflection output)
PDF  2 Pages
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制造商  PANASONIC [Panasonic Semiconductor]
网页  http://www.panasonic.com/industrial/
标志 PANASONIC - Panasonic Semiconductor

2SC5513 数据表(HTML) 1 Page - Panasonic Semiconductor

  2SC5513 Datasheet HTML 1Page - Panasonic Semiconductor 2SC5513 Datasheet HTML 2Page - Panasonic Semiconductor  
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1
Power Transistors
2SC5513
Silicon NPN triple diffusion mesa type
For horizontal deflection output
s Features
q
High breakdown voltage, and high reliability through the use of a
glass passivation layer
q
High-speed switching
q
Wide area of safe operation (ASO)
s Absolute Maximum Ratings (T
C=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
Tj
Tstg
Ratings
1500
1500
600
5
20
11
3.5
40
3
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
TC=25°C
Ta=25
°C
s Electrical Characteristics (T
C=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
Symbol
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
tstg
tf
Conditions
VCB = 1000V, IE = 0
VCB = 1500V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 5.5A
IC = 5.5A, IB = 1.38A
IC = 5.5A, IB = 1.38A
VCE = 10V, IC = 0.1A, f = 0.5MHz
IC = 5.5A, IB1 = 1.38A, IB2 = –2.76A
min
5
typ
3
max
50
1
50
10
3
1.5
2.7
0.2
Unit
µA
mA
µA
V
V
MHz
µs
µs
Unit: mm
1:Base
2:Collector
3:Emitter
TOP–3E Full Pack Package
15.5
±0.5
3.0
±0.3
φ3.2±0.1
5.45
±0.3
123
5.45
±0.3
1.1
±0.1
2.0
±0.2
4.0
5
°
5
°
5
°
5
°
5
°
5
°
0.7
±0.1


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