STP45NF06 datasheet(1/3 Pages) DOINGTER

部件名	STP45NF06

功能描述	N-Channel MOSFET uses advanced trench technology

PDF	3 Pages

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制造商	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

网页	http://www.doingter.cn/

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Description：

This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=60V,ID=50A,RDS(ON)<22mΩ@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(T

C=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

60

V

VGS

Gate-Source Voltage

±20

V

ID

Continuous Drain Current-

50

A

Continuous Drain Current-TC=100℃

35.4

Pulsed Drain Current

200

EAS

Single Pulse Avalanche Energy

490

mJ

PD

Power Dissipation

120

W

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

D S

G

STP45NF06

类似零件编号 - STP45NF06

制造商	部件名	数据表	功能描述
STMicroelectronics	STP45NF06	114Kb / 6P	N-CHANNEL 60V - 0.022ohm - 38A TO-220 STripFET™ POWER MOSFET Nov-2000
STMicroelectronics	STP45NF06	362Kb / 15P	N-channel 60 V, 0.023 Ω, 38 A TO-220, D2PAK STripFETTM II Power MOSFET July 2010
Inchange Semiconductor ...	STP45NF06	319Kb / 2P	Isc N-Channel MOSFET Transistor
VBsemi Electronics Co.,...	STP45NF06	1Mb / 9P	N-Channel 60 V (D-S) MOSFET
STMicroelectronics	STP45NF06L	441Kb / 10P	N-CHANNEL 60V - 0.022ohm - 38A TO-220 / D2PAK STripFET™ II POWER MOSFET Sep-2002

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