MODEL: PPD

PPD SPECIFICATIONS

ES-1370 Rev.13 Page 3/5

http://www.m-system.co.jp/

Amplitude

Vinp-p

t

Volts

Sensitivity Level

Input Monitor LED

0V

OFF

ON

sVoltage pulse (example)

OUTPUT SPECIFICATIONS

■ High Power Photo MOSFET Relay

Maximum frequency: 20 Hz

• Rise time: 5 msec.

• Sink time: 3 msec.

Rating: 120 V AC or 120 V DC @ 200 mA (resistive load)

On resistance: 3 Ω

■ Open Collector

Maximum frequency: 100 kHz

50 V DC @ 50 mA (resistive load)

Saturation voltage: 0.5 V DC

■ Voltage Pulse: Rating (5, 12 or 24 V) ±10 %

Maximum frequency: 100 kHz (50 kHz for 24 V)

Load resistance: ≥ 1.2 kΩ

Low level: ≤ 0.5 V

OUTPUT PULSE WIDTH

■ Equal to the input: Output waveforms have the same

period and duty ratio as those of input waveforms (when DC

coupled).

■ One-shot Output

The PPD detects a pulse sink and outputs [input pulse width

±20 %]; 50 msec. standard

Note: 2 types of one-shot detection are available: pulse rise

or sink. Refer to the table on the "Output Logic" section and

specify when ordering.

Optional pulse width: 30 μsec. – 300 msec.

INSTALLATION

Power consumption

•AC: Approx. 6 VA

•DC: Approx. 6 W (230 mA at 24 V)

Operating temperature: -5 to +60°C (23 to 140°F)

Operating humidity: 30 to 90 %RH (non-condensing)

Mounting: Surface or DIN rail

Weight: 200 g (0.44 lb)

PERFORMANCE

Response time

Open collector or voltage pulse: the output is delayed at

both pulse rise and fall by 3 μsec. each. The delay could be

much longer for certain types of load for open collector.

High power photo MOSFET relay: the output is delayed by

10 msec. at the rise, by 3 msec. at the fall.

Insulation resistance: ≥ 100 MΩ with 500 V DC

Dielectric strength: 2000 V AC @1 minute (input to output

to power to ground)