SSFD6035 datasheet(2/7 Pages) VBSEMI

2 / 7 page

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 µA

- 60

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 1.5

- 3

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = - 60 V, VGS = 0 V

- 1

µA

VDS = - 60 V, VGS = 0 V, TJ = 125 °C

- 50

VDS = - 60 V, VGS = 0 V, TJ = 150 °C

- 100

On-State Drain Currenta

ID(on)

VDS = -5 V, VGS = - 10 V

- 50

Drain-Source On-State Resistancea

RDS(on)

VGS = - 10 V, ID = - 17 A

0.0



VGS = - 10 V, ID = - 40 A, TJ = 125 °C

0.0

VGS = - 10 V, ID = - 40 A, TJ = 150 °C

0.0

VGS = - 4.5 V, ID = - 14 A

0.0

Forward Transconductancea

gfs

VDS = - 15 V, ID = - 17 A

Dynamicb

Input Capacitance

Ciss

VGS = 0 V, VDS = - 25 V, f = 1 MHz

2950

Output Capacitance

Coss

380

Reverse Transfer Capacitance

Crss

305

Total Gate Chargec

VDS = - 30 V, VGS = - 10 V, ID = - 40 A

110

165

Gate-Source Chargec

Qgs

Gate-Drain Chargec

Qgd

Turn-On Delay Timec

td(on)

VDD = - 30 V, RL = 0.6 Ω

ID ≅ - 40 A, VGEN = - 10 V, RG = 6

Ω

Rise Timec

105

Turn-Off Delay Timec

td(off)

175

260

Fall Timec

175

260

Source-Drain Diode Ratings and Characteristics TC = 25 °C

Continuous Current

Pulsed Current

ISM

- 80

Forward Voltagea

VSD

IF = - 40 A, VGS = 0 V

- 1

- 1.6

Reverse Recovery Time

trr

IF = - 40 A, dI/dt = 100 A/µs

0.0

E-mail：China@VBsemi TEL:86-755-83251052

www.VBsemi.tw

SSFD6035

SSFD6035 数据表(PDF) 2 Page - VBsemi Electronics Co.,Ltd

SSFD6035 数据表(HTML) 2 Page - VBsemi Electronics Co.,Ltd

Html Pages

1 2 3 4 5 6 7

数据表下载