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ISCNL266D 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCNL266D 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc P-Channel MOSFET Transistor ISCNL266D · FEATURES · Drain Current –ID= -18A@ TC=25℃ · Drain Source Voltage- : VDSS= -60V(Min) · Static Drain-Source On-Resistance : RDS(on) = 90mΩ(Max) · 175℃ Operating Junction Temperature · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS · Audio amplifier applications. · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -60 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous -18 A IDM Drain Current-Single Pulsed -26 A PD Total Dissipation @TC=25℃ 93 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-case thermal resistance 1.6 ℃ /W |
类似零件编号 - ISCNL266D |
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类似说明 - ISCNL266D |
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