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SWK4304 数据表(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

部件名 SWK4304
功能描述  N-Channel MOSFET uses advanced trench technology
PDF  4 Pages
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制造商  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
网页  http://www.doingter.cn/
标志 DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

SWK4304 数据表(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

  SWK4304 Datasheet HTML 1Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SWK4304 Datasheet HTML 2Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SWK4304 Datasheet HTML 3Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SWK4304 Datasheet HTML 4Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.  
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Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
30
---
---
V
△BVDSS/△TJ
BVDSS Temperature Coefficient
Reference to 25℃ ,
ID=1mA
---
0.04
---
V/℃
IDSS
Drain-Source Leakage Current
VDS=30V , VGS=0V ,
TJ=25℃
---
---
1
uA
VDS=24V , VGS=0V ,
TJ=125℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0V
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
1.2
1.6
2.5
V
△VGS(th)
VGS(th) Temperature Coefficient
---
4
---
mV/℃
RDS(ON)
Static Drain-Source On Resistance
VGS=10V,ID=10A
---
5
6
mΩ
VGS=4.5V,ID=5A
---
6.5
9
GFS
Forward Transconductance
VDS=10V, ID=10A
---
18
---
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS=25V, VGS=0V, f=1MHz
---
1160
1900
pF
Coss
Output Capacitance
---
200
400
Crss
Reverse Transfer Capacitance
---
180
360
Switching Characteristics
td(on)
Turn-On Delay Time
2,3
VDS=15V, ID=15A,
RGEN=3.3Ω, VGS=10V
---
7.5
15
ns
tr
Rise Time
2,3
---
14.5
28
ns
td(off)
Turn-Off Delay Time
2,3
---
35.2
60
ns
tf
Fall Time
2,3
---
9.6
19
ns
SWK4304



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