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SWK4466 数据表(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

部件名 SWK4466
功能描述  N-Channel MOSFET uses advanced trench technology
PDF  6 Pages
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制造商  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
网页  http://www.doingter.cn/
标志 DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

SWK4466 数据表(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

  SWK4466 Datasheet HTML 1Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SWK4466 Datasheet HTML 2Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SWK4466 Datasheet HTML 3Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SWK4466 Datasheet HTML 4Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SWK4466 Datasheet HTML 5Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SWK4466 Datasheet HTML 6Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.  
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2 —
Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
30
---
---
V
IDSS
Drain-Source Leakage Current
VDS=150V , VGS=0V
---
---
1
uA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0V
---
---
±100
nA
On Characteristics
3
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
1.2
2.4
V
RDS(ON)
Static Drain-Source On Resistance
VGS=10V,ID=7A
---
20
mΩ
VGS=4.5V,ID=5A
30
42
GFS
Forward Transconductance
VDS=5V, ID=7A
3
10
---
S
Dynamic Characteristics
4
Ciss
Input Capacitance
VDS=15V, VGS=0V, f=1MHz
---
540
---
pF
Coss
Output Capacitance
---
83
---
Crss
Reverse Transfer Capacitance
---
63
---
Switching Characteristics
4
td(on)
Turn-On Delay Time
---
10
---
ns
tr
Rise Time
---
4
---
ns
td(off)
Turn-Off Delay Time
---
27
---
ns
tf
Fall Time
---
5
---
ns
Qg
Total Gate Charge
VGS=5V, VDS=10V,
ID=7A
---
13
---
nC
Qgs
Gate-Source
Charge
---
1.3
---
nC
Qgd
Gate-Drain “Miller” Charge
---
4.6
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
1
VGS=0V,IS=30A,TJ=25℃
---
1.2
V
ISD
Continuous Source Current
---
---
---
2
A
VDD=15V,ID=7A,RL=15Ω
VGS=10V,RG=2.5Ω
3
2
SWK4466



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