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SWK4614 数据表(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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SWK4614 数据表(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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2 / 5 page ![]() — 2 — N-Channel Electrical Characteristics:(T C=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units ON/Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 40 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=40V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 1.8 2.5 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=5A --- 24 32 mΩ VGS=4.5V,ID=3A --- 32 45 GFS Forward Transconductance VDS=10V, ID=3A --- 3.6 --- S Dynamic Characteristics Ciss Input Capacitance VDS=15V, VGS=0V, f=1MHz --- 420 800 pF Coss Output Capacitance --- 65 120 Crss Reverse Transfer Capacitance --- 40 80 Switching Characteristics td(on) Turn-On Delay Time 2.3 VDS=20V, ID=1A, VGS=4.5V,RGEN=25Ω --- 3.2 6 ns tr Rise Time 2.3 --- 8.6 16 ns td(off) Turn-Off Delay Time 2.3 --- 18 36 ns tf Fall Time 2.3 --- 6 12 ns Qg Total Gate Charge 2.3 VGS=4.5V, VDS=20V, ID=3A --- 2.8 5.6 nC Qgs Gate-Source Charge 2.3 --- 0.5 1 nC Qgd Gate-Drain “Miller” Charge 2.3 --- 1.5 3 nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage 1 VGS=0V,IS=1A --- --- 1 V LS --- 6.7 A LSM --- 13.4 A Continuous Source Current Pulsed Source Current VG=VD=0V , Force Current Notes: 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. www.doingter.cn SWK4614 |
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