BC847C datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-amb

• Thermal Resistance Junction-Ambient

Max

500

oC/W

• Device mounted on a PCB area of 1 cm2.

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = 30 V

TC = 150

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

100

V(BR)CBO

Collector-Base

Breakdown Voltage

(IE = 0)

IC = 10

µA

V(BR)CEO

∗ Collector-Emitter

Breakdown Voltage

(IB = 0)

IC = 2 mA

V(BR)EBO

Emitter-Base

Breakdown Voltage

(IC = 0)

IE = 10

µA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 10 mA

IB = 0.5 mA

IC = 100 mA

IB = 5 mA

0.09

0.2

0.25

0.6

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 10 mA

IB = 0.5 mA

IC = 100 mA

IB = 5 mA

0.7

0.9

VBE(on)

∗ Base-Emitter On

Voltage

IC = 2 mA

VCE = 5 V

IC = 10 mA

VCE = 5 V

0.58

0.66

0.7

0.77

hFE

∗

DC Current Gain

IC = 10

µA

VCE = 5 V

for BC847B

for BC847C

IC = 2 mA

VCE = 5 V

for BC847B

for BC847C

200

420

150

270

290

520

450

800

Transition Frequency

IC = 10 mA VCE = 5 V f = 100MHz

100

MHz

CCBO

Collector-Base

Capacitance

IE = 0

VCB = 10 V

f = 1 MHz

2.5

Noise Figure

VCE = 5 V

IC = 0.2 mA

f = 1KHz

∆f = 200 Hz RG = 2 KΩ

210

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %

BC847B / BC847C

2/4

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