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UI0004 数据表(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

部件名 UI0004
功能描述  N-Channel MOSFET uses advanced trench technology
PDF  4 Pages
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制造商  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
网页  http://www.doingter.cn/
标志 DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

UI0004 数据表(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

  UI0004 Datasheet HTML 1Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. UI0004 Datasheet HTML 2Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. UI0004 Datasheet HTML 3Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. UI0004 Datasheet HTML 4Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.  
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Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
100
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=80V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
1
2
3
V
RDS(ON)
Drain-Source On Resistance
3
VGS=10V,ID=10A
---
75
100
mΩ
VGS=4.5V,ID=8A
---
100
115
GFS
Forward Transconductance
VDS=0V, ID=0A
---
---
---
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS=25V, VGS=0V, f=1MHz
---
890
---
pF
Coss
Output Capacitance
---
60
---
Crss
Reverse Transfer Capacitance
---
25
---
Switching Characteristics
td(on)
Turn-On Delay Time
3
VDD=25V, ID=8A,
VGS=10V,RGEN=1Ω
---
14.2
---
ns
tr
Rise Time
2,3
---
34
---
ns
td(off)
Turn-Off Delay Time
---
40.4
---
ns
tf
Fall Time
2,3
---
6
---
ns
Qg
Total Gate Charge
3
VGS=10V, VDS=80V,
ID=10A
---
24
---
nC
Qgs
Gate-Source
Charge
---
5
---
nC
Qgd
Gate-Drain “Miller” Charge
---
8
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
3
VGS=0V,IS=8A
---
0.8
1.2
V
UI0004



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