US2BA datasheet(2/5 Pages) ONSEMI

2 / 5 page

US2AA−US2MA

www.onsemi.com

Table 2. ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Unit

US2

VRRM

Repetitive Peak Reverse Voltage

100

200

300

400

600

800

1000

VRMS

RMS Reverse Voltage

140

210

280

420

560

700

VDC

DC Blocking Voltage

100

200

300

400

600

800

1000

IF(AV)

Average Forward Rectified Current

1.5

IFSM

Peak Forward Surge Current,

8.3 ms Single Half−Sine Wave,

Superimposed on Rated Load

Operating Junction Temperature Range

−55 to +150

°C

TSTG

Storage Temperature Range

−55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

Table 3. THERMAL CHARACTERISTICS (NOTE 1) (Values are at TA = 25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

RqJA

Typical Thermal Resistance, Junction−to−Ambient

189

°C/W

YJL

Typical Thermal Characteristics, Junction−to−Lead (with Reference to Cathode Pin)

°C/W

1. Device mounted at minimum pad.

Table 4. ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

US2

Maximum Instantaneous Forward Voltage (Note2)

at Rated IF(AV)

1.0

1.3

1.7

Maximum Re-

verse Current

at Rated VR

TJ = 25°C

TJ = 125°C

100

trr

Maximum Reverse Recovery Time (Note 3)

Typical Junction Capacitance (Note 4)

2. Pulse test with PW = 300 ms, 1% duty cycle

3. Reverse recovery test conditions: IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A

4. Measured at 1 Mhz and applied reverse voltage of 4.0 V D.C.

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